MSAGA11F120D

www.DataSheet4U.com 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator Applications DESCRIPTION: N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Surge Current (ICM) - Amps 55 10µs x 4ms double exponential FEATURES: Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 10µs 4000 µs MAXIMUM RATINGS: SYMBOL VCES VCGR VEG VGE IC1 IC2 ICM ICM1 ICM2 ICsurge2 EAS PD TJ, TSTG Time - µ sec PARAMETER Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20KΩ ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25° C Continuous Collector Current @ TC = 110° C Surge Current (10µs x 4ms double exponential, see figure 2) Pulsed Collector Current ¬ @ TC = 25° C Pulsed Collector Current ¬ @ TC = 110° C Surge Current: tp= 2 us (ton= 1.5 µs; toff= 0.5 µs to 50% decay), 10 pulses, duty cycle= 1:2,500,000 (12 pulses/minute) Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage: Junction Temperature Range VALUE 1200 1200 1...