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TC55VBM316AFTN

Part Number	TC55VBM316AFTN
Manufacturer	Toshiba Semiconductor
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published	Jul 30, 2009
Detailed Description	TC55VBM316AFTN/ASTN40,55 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,2...
Datasheet	TC55VBM316AFTN PDF File

Overview

TC55VBM316AFTN/ASTN40,55 www.
DataSheet4U.
com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.
3 to 3.
6 V power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns.
It is automatically placed in low-power mode at 0.
7 µA standby current (at VDD = 3 V, Ta = 25°C, ...

Similar Datasheet

TC55VBM316AFTN MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS - Toshiba Semiconductor

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