RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
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DB-55008L-318
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Pr...
Description
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DB-55008L-318
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier
Description
The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications. Table 1.
Mechanical specification: L = 60 mm, W = 30 mm
Device summary
Order codes DB-55008L-318
February 2009
Rev 1
1/14
www.st.com 14
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
DB-55008L-318
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 3 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4.1 VDD = 13.6 V, IDQ = 200 mA, Pin = 26 dBm . . . . . . . . . . . . . . . . . . . . . . . 5
5 6 7 8 9
Test circuit . . . . . . . . . ....
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