BLS6G2933S-130

www.DataSheet4U.com BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.9 GHz to 3.3 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) www.DataSheet4U.com NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 1.3 Applications I S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate sourc...