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MRFE6S9060NR1

Freescale Semiconductor
Part Number MRFE6S9060NR1
Manufacturer Freescale Semiconductor
Description RF Power FET
Published Jul 29, 2009
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET De...
Datasheet PDF File MRFE6S9060NR1 PDF File

MRFE6S9060NR1
MRFE6S9060NR1

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg.
, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 21.
1 dB Drain Efficiency — 33% ACPR @ 750 kHz Offset — - 45.
7 ...


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