DatasheetsPDF.com

BLF6G10-45 Dataheets PDF



Part Number BLF6G10-45
Manufacturers NXP
Logo NXP
Description Power LDMOS Transistor
Datasheet BLF6G10-45 DatasheetBLF6G10-45 Datasheet (PDF)

www.DataSheet4U.com BLF6G10-45 Power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 22.5 ηD (%) 7.8 ACPR (dBc) −48.5[1] Test sign.

  BLF6G10-45   BLF6G10-45


Document
www.DataSheet4U.com BLF6G10-45 Power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 22.5 ηD (%) 7.8 ACPR (dBc) −48.5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 22.5 dB N Efficiency = 7.8 % N ACPR = −48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) www.DataSheet4U.com NXP Semiconductors BLF6G10-45 Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 Symbol 1 3 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Package Name BLF6G10-45 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT608A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 13 +150 225 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 12.5 W Typ 1.7 Unit K/W BLF6G10-45_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 3 February 2009 2 of 11 www.DataSheet4U.com NXP Semiconductors BLF6G10-45 Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 72 mA VDS = 28 V; ID = 430 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 3.6 A VGS = VGS(th) + 3.75 V; ID = 2.52 A Min 65 1.35 1.7 Typ 1.9 2.15 12.5 5 0.2 Max 2.35 2.7 1.4 140 Unit V V V µA A nA S Ω 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp RLin ηD ACPR Parameter power gain input return loss drain efficiency adjacent channel power ratio Conditions PL(AV) = 1.0 W PL(AV) = 1.0 W PL(AV) = 1.0 W PL(AV) = 1.0 W Min 21 8 6.9 Typ 22.5 13 7.8 Max 23.9 Unit dB dB % dBc −48.5 −45.5 7.1 Ruggedness in class-AB operation The BLF6G10-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 350 mA; PL = 35 W (CW); f = 960 MHz. BLF6G10-45_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 3 February 2009 3 of 11 www.DataSheet4U.com NXP Semiconductors BLF6G10-45 Power LDMOS transistor 25 Gp (dB) 23 001aah527 75 ηD (%) ηD 60 21 45 19 Gp 30 17 15 15 0 10 20 30 40 PL (W) 50 0 VDS = 28 V; IDq = 350 mA; f = 960 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 25 Gp (dB) 23 ηD 001aah528 70 ηD (%) 55 0 IMD (dBc) −30 001aah529 IMD3 IMD5 IMD7 21 40 19 Gp 25 −60 17 10 15 0 20 40 60 80 PL (PEP)(W) −5 −90 0 20 40 PL(PEP) (W) 60 VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz. VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values BLF6G10-45_1 © NXP B.V. 2009. All rights reserved. Product data sheet .


BLF6G10LS-200R BLF6G10-45 BLF6G10S-45


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)