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BLF6G10-45
Power LDMOS transistor
Rev. 01 — 3 February 2009 Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 920 to 960
VDS (V) 28
PL(AV) (W) 1.0
Gp (dB) 22.5
ηD (%) 7.8
ACPR (dBc) −48.5[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 22.5 dB N Efficiency = 7.8 % N ACPR = −48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
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NXP Semiconductors
BLF6G10-45
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1
Symbol
1
3 2
2 3
sym112
[1]
Connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLF6G10-45 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT608A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 13 +150 225 Unit V V A °C °C
5. Thermal characteristics
Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 12.5 W Typ 1.7 Unit K/W
BLF6G10-45_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 3 February 2009
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NXP Semiconductors
BLF6G10-45
Power LDMOS transistor
6. Characteristics
Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 72 mA VDS = 28 V; ID = 430 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 3.6 A VGS = VGS(th) + 3.75 V; ID = 2.52 A Min 65 1.35 1.7 Typ 1.9 2.15 12.5 5 0.2 Max 2.35 2.7 1.4 140 Unit V V V µA A nA S Ω
7. Application information
Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp RLin ηD ACPR Parameter power gain input return loss drain efficiency adjacent channel power ratio Conditions PL(AV) = 1.0 W PL(AV) = 1.0 W PL(AV) = 1.0 W PL(AV) = 1.0 W Min 21 8 6.9 Typ 22.5 13 7.8 Max 23.9 Unit dB dB % dBc
−48.5 −45.5
7.1 Ruggedness in class-AB operation
The BLF6G10-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 350 mA; PL = 35 W (CW); f = 960 MHz.
BLF6G10-45_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 3 February 2009
3 of 11
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NXP Semiconductors
BLF6G10-45
Power LDMOS transistor
25 Gp (dB) 23
001aah527
75 ηD (%)
ηD
60
21
45
19
Gp
30
17
15
15 0 10 20 30 40 PL (W) 50
0
VDS = 28 V; IDq = 350 mA; f = 960 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values
25 Gp (dB) 23 ηD
001aah528
70 ηD (%) 55
0 IMD (dBc) −30
001aah529
IMD3 IMD5 IMD7
21
40
19
Gp
25 −60
17
10
15 0 20 40 60 80 PL (PEP)(W)
−5
−90 0 20 40 PL(PEP) (W) 60
VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz.
VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values
BLF6G10-45_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
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