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BLF6G10LS-200R
Power LDMOS transistor
Rev. 01 — 21 January 2008 Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. M...
