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BLF6G10LS-135R

NXP Semiconductors

Power LDMOS transistor


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www.DataSheet4U.com BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode...



NXP Semiconductors

BLF6G10LS-135R

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