SEMIX603GB066HDS

SEMiX603GB066HDs SEMiX® 3s Trench IGBT Modules SEMiX603GB066HDs Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications* Matrix Converter Resonant Inverter Current Source Inverter Remarks Case temperature limited to TC=125°C max. Product reliability results are valid for Tj=150°C For short circuit: Soft RGoff recommended Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 9.6 mA VGE = 0 V VCE = 600 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 300 V IC = 600 A VGE = ±15 V RG on = 3  RG off = 3  Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Eoff Tj = 150 °C Rth(j-c) per IGBT Values 600 720 541 600 1200 -20 ... 20 6 -40 ...