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LX5535

Microsemi Corporation
Part Number LX5535
Manufacturer Microsemi Corporation
Description InGaP HBT 2.4 - 2.5 GHz Power Amplifier
Published Jul 29, 2009
Detailed Description com TM ® LX5535 InGaP HBT 2.4 – 2.5 GHz Power Amplifier PRODUCTION D ATA S HEET KEY FEATURES DESCRIPT...
Datasheet PDF File LX5535 PDF File

LX5535
LX5535


Overview
com TM ® LX5535 InGaP HBT 2.
4 – 2.
5 GHz Power Amplifier PRODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The LX5535 is a power amplifier optimized for WLAN applications in the 2.
4-2.
5 GHz frequency range.
The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD).
With single low voltage supply of 5V, it provides 32 dB power gain between 2.
4-2.
5GHz, at a low quiescent current of 120mA.
The output power for EVM(Error Vector Magnitude) of 3.
5% is 25dBm (64QAM/54Mbps), where the PA consumes 260mA total ...



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