ST9011

www.DataSheet4U.com ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 50 30 5 30 400 150 -55 to +150 Unit V V V mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/12/2004 www.DataSheet4U.com ST 9011 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=5V, IC=1mA Current Gain Group D E F G H I Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VCB=5V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Base Emitter Voltage at VCE=5V, IC=1mA Collector Base Capacitance at VCB=10V, f=1MHz Gain Bandwidth Product at VCE=5V, IC=1mA fT 150 370 MHz CCBO 1.5 pF VBE(on) 0.60 0.7 0.75 V VCE(sat) 0.08 0.3 V IEBO 100 nA ICBO 100 nA V(BR)EBO 5 V V(BR)CEO 30 V V(BR)CBO 50 V hFE hFE hFE hFE hFE hFE 28 39 54 7...