Document
STF12N65M5, STP12N65M5
Datasheet
N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages
TAB
123 TO-220FP
123 TO-220
D(2, TAB)
Features
Order code
VDS @ TJ max.
RDS(on) max.
STF12N65M5 STP12N65M5
710 V
430 mΩ
• Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested
ID 8.5 A
G(1) S(3)
Applications
• Switching applications
AM01475v1_noZen
Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Product status links STF12N65M5 STP12N65M5
Product summary
Order code
STF12N65M5
Marking
12N65M5
Package
TO-220FP
Packing
Tube
Order code
STP12N65M5
Marking
12N65M5
Package
TO-220
Packing
Tube
DS6117 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STF12N65M5, STP12N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.)
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt(3)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C)
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. ISD ≤ 8.5 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V.
Value Unit
TO-220FP TO-220
650
V
25
V
8.5(1) 5.4(1)
8.5 A
5.4
34
34
A
25
70
W
2.5
A
150
mJ
15
V/ns
2.5
kV
°C -55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
RthJC RthJA
Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient
Value Unit
TO-220FP TO-220
5.00
1.79 °C/W
62.5
°C/W
DS6117 - Rev 6
page 2/15
STF12N65M5, STP12N65M5
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 3. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 650 V VGS = 0 V, VDS = 650 V, TC = 125 °C(1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 4.3 A
1. Specified by design, not tested in production.
Min. Typ. Max. Unit
650
V
1 µA
100
100 nA
3
4
5
V
390 430 mΩ
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
-
900
-
pF
Coss
Output capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
22
-
pF
Crss
Reverse transfer capacitance
-
2
-
pF
Co(tr)(1) Co(er)(2)
Equivalent capacitance time related
Equivalent capacitance energy related
VDS = 0 to 520 V, VGS = 0 V
-
64
-
pF
-
21
-
pF
Rg
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
5
-
Ω
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 520 V, ID = 4.25 A, VGS = 0 to 10 V
-
20
-
nC
(see Figure 17. Test circuit for gate
-
4.8
-
nC
charge behavior)
-
8.3
-
nC
1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated value.
2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated value.
Symbol td(v) tr(v) tf(i) tc(off)
Parameter Voltage delay time Voltage rise time Current fall time Crossing time
Table 5. Switching times
Test conditions
VDD = 400 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18. Test circuit for inductive load switching and diode recovery times and Figure 21. Switching time waveform)
Min. -
Typ. Max. Unit
22.6 -
ns
17.6 -
ns
15.6 -
ns
23.4 -
ns
DS6117 - Rev 6
page 3/15
STF12N65M5, STP12N65M5
Electrical characteristics
Table 6. Source-drain diode
Symbol
Parameter
Test conditions
ISD
Source-drain current
ISDM(1)
Source-drain current (pulsed)
VSD(2) trr Qrr
IRRM
Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 8.5 A, VGS = 0 V
ISD = 8.5 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 18. Test circuit for inductive load switching and diode recovery times)
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs,
VDD = 100 V, .