DatasheetsPDF.com

STGP14N60D Dataheets PDF



Part Number STGP14N60D
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 14 A - 600 V - Short Circuit Rugged IGBT
Datasheet STGP14N60D DatasheetSTGP14N60D Datasheet (PDF)

www.DataSheet4U.com STGF14N60D STGP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features ■ ■ ■ ■ ■ ■ Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultra fast soft recovery antiparallel diode Short circuit rugged 1 2 1 3 2 3 TO-220FP TO-220 Applications ■ ■ ■ Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies .

  STGP14N60D   STGP14N60D



Document
www.DataSheet4U.com STGF14N60D STGP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features ■ ■ ■ ■ ■ ■ Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultra fast soft recovery antiparallel diode Short circuit rugged 1 2 1 3 2 3 TO-220FP TO-220 Applications ■ ■ ■ Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies Figure 1. Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Marking GF14N60D GP14N60D Package TO-220FP TO-220 Packaging Tube Tube Order codes STGF14N60D STGP14N60D February 2009 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STGF14N60D, STGP14N60D Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 www.DataSheet4U.com STGF14N60D, STGP14N60D Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC (1) Absolute maximum ratings Value Parameter TO-220 Collector-emitter voltage (VGE = 0) Collector current (continuous) at TC = 25 °C Collector current (continuous) at TC = 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Insulation withstand voltage (RMS) from all three leads to external hea sink ( t=1 s; TC = 25 °C) Total dissipation at TC = 25 °C Short circuit withstand time, VCE = 0.5V(BR)CES, TC = 125 °C, RG = 10 Ω, VGE = 15 V Operating junction temperature -95 5 – 40 to 175 25 14 50 50 ±20 20 55 600 11 7 TO-220FP V A A A A V A A Unit IC(1) ICL ICP (2) (3) VGE IF IFSM VISO PTOT tscw Tj 1. 2500 33 V W µs °C Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Vclamp = 80% of VCES, Tj =175 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Thermal resistance Value Parameter TO-220 TO-220FP 4.5 5.6 62.5 °C/W °C/W °C/W 1.56 2.2 Unit Rthj-case Thermal resistance junction-case IGBT max. Rthj-case Thermal resistance junction-case diode max. Rthj-amb Thermal resistance junction-ambient max. 3/11 www.DataSheet4U.com Electrical characteristics STGF14N60D, STGP14N60D 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol V(BR)CES VCE(sat) VGE(th) IGES ICES gfs (1) Static Parameter Test conditions Min. 600 2.1 1.8 4.5 6.5 ±100 150 1 3.2 Typ. Max. Unit V V V V nA µA mA S Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) Collector-emitter saturation voltage Gate threshold voltage Gate-emitter leakage current (VCE = 0) Collector cut-off current (VGE = 0) Forward transconductance VGE= 15 V, IC= 7 A VGE= 15 V, IC= 7 A, TC= 125 °C VCE= VGE, IC= 250 µA VGE= ±20 V, TC= 125 °C VCE= 600 V VCE= 600 V, TC= 125 °C VCE = 15 V , IC = 7 A 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. TBD TBD TBD TBD TBD TBD Max. Unit pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 3) 4/11 www.DataSheet4U.com STGF14N60D, STGP14N60D Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 7 A , VGE= 15 V, RG= 10 Ω (see Figure 2) VCC = 390 V, IC = 7 A , VGE= 15 V, RG= 10 Ω TC= 125 °C (see Figure 2) VCC = 390 V, IC = 7 A, , VGE = 15 V RGE = 10 Ω (see Figure 2) VCC = 390 V, IC = 7 A, , VGE = 15 V RGE = 10 Ω TC= 125 °C (see Figure 2) Min. Typ. TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns .


STGF14N60D STGP14N60D STX-RLINK


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)