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STGF14N60D STGP14N60D
14 A - 600 V - short circuit rugged IGBT
Preliminary Data
Features
■ ■ ■ ■ ■ ■
Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultra fast soft recovery antiparallel diode Short circuit rugged
1 2
1
3
2
3
TO-220FP
TO-220
Applications
■ ■ ■
Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies Figure 1. Internal schematic diagram
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Table 1.
Device summary
Marking GF14N60D GP14N60D Package TO-220FP TO-220 Packaging Tube Tube
Order codes STGF14N60D STGP14N60D
February 2009
Rev 1
1/11
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
STGF14N60D, STGP14N60D
Contents
1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STGF14N60D, STGP14N60D
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC
(1)
Absolute maximum ratings
Value Parameter TO-220 Collector-emitter voltage (VGE = 0) Collector current (continuous) at TC = 25 °C Collector current (continuous) at TC = 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Insulation withstand voltage (RMS) from all three leads to external hea sink ( t=1 s; TC = 25 °C) Total dissipation at TC = 25 °C Short circuit withstand time, VCE = 0.5V(BR)CES, TC = 125 °C, RG = 10 Ω, VGE = 15 V Operating junction temperature -95 5 – 40 to 175 25 14 50 50 ±20 20 55 600 11 7 TO-220FP V A A A A V A A Unit
IC(1) ICL ICP
(2) (3)
VGE IF IFSM
VISO PTOT tscw Tj
1.
2500 33
V W µs °C
Calculated according to the iterative formula:
T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )
2. Vclamp = 80% of VCES, Tj =175 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Thermal resistance
Value Parameter TO-220 TO-220FP 4.5 5.6 62.5 °C/W °C/W °C/W 1.56 2.2 Unit
Rthj-case Thermal resistance junction-case IGBT max. Rthj-case Thermal resistance junction-case diode max. Rthj-amb Thermal resistance junction-ambient max.
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Electrical characteristics
STGF14N60D, STGP14N60D
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified) Table 4.
Symbol V(BR)CES VCE(sat) VGE(th) IGES ICES gfs (1)
Static
Parameter Test conditions Min. 600 2.1 1.8 4.5 6.5 ±100 150 1 3.2 Typ. Max. Unit V V V V nA µA mA S
Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) Collector-emitter saturation voltage Gate threshold voltage Gate-emitter leakage current (VCE = 0) Collector cut-off current (VGE = 0) Forward transconductance VGE= 15 V, IC= 7 A VGE= 15 V, IC= 7 A, TC= 125 °C VCE= VGE, IC= 250 µA VGE= ±20 V, TC= 125 °C VCE= 600 V VCE= 600 V, TC= 125 °C VCE = 15 V , IC = 7 A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol Cies Coes Cres Qg Qge Qgc
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. TBD TBD TBD TBD TBD TBD Max. Unit pF pF pF nC nC nC
VCE = 25 V, f = 1 MHz, VGE= 0
VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 3)
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STGF14N60D, STGP14N60D
Electrical characteristics
Table 6.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 7 A , VGE= 15 V, RG= 10 Ω (see Figure 2) VCC = 390 V, IC = 7 A , VGE= 15 V, RG= 10 Ω TC= 125 °C (see Figure 2) VCC = 390 V, IC = 7 A, , VGE = 15 V RGE = 10 Ω (see Figure 2) VCC = 390 V, IC = 7 A, , VGE = 15 V RGE = 10 Ω TC= 125 °C (see Figure 2) Min. Typ. TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns
.