HI882

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9014 Issued Date : 1996.04.12 Revised Date : 2001.01.25 Page No. : 1/4 HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver. Absolute Maximum Ratings (Ta=25°C) TO-251 Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................... 40 V BVCEO Collector to Emitter Voltage.................................................................................... 30 V BVEBO Emitter to Base Voltage............................................................................................ 5 V IC Collector Current (DC) ...................................................................................................... 3 A IC Collector Current (Pulse) .................................................................................................. 7 A IB Base Current (DC) ............