SI4435DYPBF

www.DataSheet4U.com PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S 1 8 A D D D D S S G 2 7 VDSS = -30V RDS(on) = 0.020Ω 3 6 4 5 Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -8.0 -6.4 -50 2.5 1.6 0.02 ± 20 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 09/30/04 www.DataSheet4U.com Si4435DY...