SI4433DY

Si4433DY www.DataSheet4U.com New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = –4.5 V –20 0.160 @ VGS = –2.5 V 0.240 @ VGS = –1.8 V FEATURES ID (A) –3.9 –3.2 –2.6 D TrenchFETr Power MOSFET D Fast Switching APPLICATION D DC-DC Conversion D Asynchronous Buck Converter D Voltage Inverter S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –2.8 IDM IS –2.1 2.5 1.3 –55 to 150 –10 –1.2 1.4 0.7 W _C –2.1 A Symbol VDS VGS 10 secs Steady State –20 "8 Unit V –3.9 –2.9 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71663 S-04245—Rev. A, 16-Jul-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 75 19 Maximum 50 90 25 Unit _C/W 1 Si4433DY www.DataSheet4U.com Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS =...