MW6IC2420NBR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 0, 3/2007 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. Driver Applications Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain — 19.5 dB Power Added Efficiency — 27% Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout. Features Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function Integrated ESD Protection 200°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW RF LDMOS INTEGRATED POWER AMPLIFIER CASE 1329 - 09 TO - 272 WB - 16 PLASTIC VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout / VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation 13 12 NC GND Figure 1. Functional Block Diagram (Top View) Note: ...