Freescale Semiconductor Technical Data www.DataSheet4U.com
Document Number: MRF7S18125AH Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station m...
