HMC-ALH445

www.DataSheet4U.com v00.1007 HMC-ALH445 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Features Noise Figure: 3.9 dB @ 28 GHz Gain: 9 dB P1dB Output Power: +12 dBm @ 28 GHz Supply Voltage: +5V @ 45 mA Die Size: 1.6 x 1.6 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH445 is ideal for: Wideband Communication Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram General Description The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifier die which operates between 18 and 40 GHz. The amplifier provides 9 dB of gain, 3.9 dB noise figure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a single +5V supply. The HMC-ALH445 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +5V Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 5V) *Unless otherwise indicated, all measurements are from probed die 8 Min. Typ. 18 - 28 9 4 10 15 12 45 5 8 Max. Min. Typ. 28 - 40 10 3.9 10 15 13 45 4.5 Max. Units GHz dB dB dB dB dBm mA 1 - 194 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com www.DataSheet4U.com v00.1007...