HMC-ALH102

www.DataSheet4U.com v01.0108 HMC-ALH102 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH102 is ideal for: Wideband Communications Receivers Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Features Noise Figure: 2.5 dB Gain: 11.6 dB @ 10 GHz P1dB Output Power: +10 dBm Supply Voltage: +2V @ 55 mA Die Size: 3.0 x 1.435 x 0.1 mm Functional Diagram General Description The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, 2.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMCALH102 amplifier is ideal for integration into MultiChip-Modules (MCMs) due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= 2V [1], Idd = 55mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 dB Compression Noise Figure Supply Current (Idd) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA 8 8 Min. Typ. 2 - 20 10 15 12 10 2.5 55 Max. Units GHz dB dB dB dBm dB mA 1 - 114 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order...