K6T2008S2A

Preliminary www.DataSheet4U.com K6T2008S2A Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft Draft Data April 27, 1998 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. Revision 0.0 April 1999 Preliminary www.DataSheet4U.com K6T2008S2A Family 256Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES Process Technology: TFT Organization: 256Kx8 Power Supply Voltage: 2.3 ~ 2.7V Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 32-TSOP1-0813.4F, 48(36)-FBGA-6.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6T2008S2A families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support industrial temperature ranges and have small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Max) 10µ A Operating (ICC2, Max) 15mA PKG Type K6T2008S2A-F Industrial(-40~85°C) 2.3~2.7V 851)/100ns 32-TSOP1-0813.4F 48(36)-FBGA 1. The parameter is tested with 30pF test lo...