K6T2008U2A

www.DataSheet4U.com K6T2008V2A, K6T2008U2A Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 2.0 History Design target Finalize Revised - Add FBGA type package Errata correction - Removed T ’ TL Compatible’from Features Draft Data May 26, 1998 October 8, 1998 July 21, 1999 Remark Advance Final Final 2.01 October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. Revision 2.01 October 2001 www.DataSheet4U.com K6T2008V2A, K6T2008U2A Family 256Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES Process Technology: TFT Organization: 256Kx8 Power Supply Voltage K6T2008V2A Family: 3.0V~3.6V K6T2008U2A Family: 2.7V~3.3V Low Data Retention Voltage: 2V(Min) Three State Outputs Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F 48-FBGA-6.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6T2008V2A and K6T2008U2A families are fabricated by SAMSUNG′s advanced CMOS process technology. The family support various operating temperature ranges and have various package types for user flexibility of system design. The family also support low data retention voltage for battery backup operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Fam...