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RSS090P03
Transistors
Switching (−30V, −9.0A)
RSS090P03
zFeatures 1) Low On-resistance. 2) Built-i...
www.DataSheet4U.com
RSS090P03
Transistors
Switching (−30V, −9.0A)
RSS090P03
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm)
SOP8
(5) (4)
0.4
0.2
0.4Min.
zStructure Silicon P-channel MOS FET
Each lead has same dimensions
zPackaging specifications
Package Type RSS090P03 Code Basic ordering unit (pieces) Taping TB 2500
zEquivalent circuit
(8) (7) (6) (5)
∗2 ∗1
(1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
Limits −30 ±20 ±9.0 ±36 −1.6 −36 2.0 150 −55 to +150
Unit V V A A A A W °C °C
(1)
(2)
1.75
zApplication Power switching, DC / DC converter.
3.9 6.0
1.27
(8)
(1)
(3)
5.0
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗1 ∗1 ∗2
zThermal resistance (Ta=25°C)
Parameter Channel to ambient
∗ Mounted on a ceramic board.
Symbol Rth (ch-a)
Limits 62.5
Unit °C / W
∗
Rev.A
1/4
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RSS090P03
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − VGS (th) −1.0...