RSS090P03

www.DataSheet4U.com RSS090P03 Transistors Switching (−30V, −9.0A) RSS090P03 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 (5) (4) 0.4 0.2 0.4Min. zStructure Silicon P-channel MOS FET Each lead has same dimensions zPackaging specifications Package Type RSS090P03 Code Basic ordering unit (pieces) Taping TB 2500 zEquivalent circuit (8) (7) (6) (5) ∗2 ∗1 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits −30 ±20 ±9.0 ±36 −1.6 −36 2.0 150 −55 to +150 Unit V V A A A A W °C °C (1) (2) 1.75 zApplication Power switching, DC / DC converter. 3.9 6.0 1.27 (8) (1) (3) 5.0 (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 ∗1 ∗2 zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a) Limits 62.5 Unit °C / W ∗ Rev.A 1/4 www.DataSheet4U.com RSS090P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 IDSS Zero gate voltage drain current − VGS (th) −1.0...