STW18NM60N

STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK Features Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 3 2 1 TO-220 123 I²PAK 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' 3 Table 1. Device summary Order codes STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N Marking 18NM60N 18NM60N 18NM60N 18NM60N 18NM60N Package D²PAK TO-220FP I²PAK TO-220 TO-247 !-V Packaging Tape and reel Tube Tube Tube Tube October 2010 Doc ID 15868 Rev 3 1/18 www.st.com 18 Contents Contents STB/F/I/P/W18NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .....................