Power MOSFET
STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-22...
Description
STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
Features
Order codes
VDSS (@Tjmax)
RDS(on) max.
ID
PW
STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110 W
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
3 2 1
TO-247
3 2 1
TO-220
123
I²PAK
3 1
D²PAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
$
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Table 1. Device summary Order codes STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
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