STU10NM60N

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data 7$%   DPAK 7$%    TO-220    TO-220FP 7$% IPAK    Features Order code VDS @TJ max. STD10NM60N STF10NM60N STP10NM60N STU10NM60N 650 V RDS(on) max. 0.55 Ω ID PTOT 10 A 70 W 25 W 70 W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Applications '7$% Switching applications Description * 6 Order code These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Table 1. Device summary Marki...