ZXMHC6A07N8

www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 0.25Ω @ VGS= 10V N-CH 60V 3.2nC 0.35Ω @ VGS= 4.5V 0.40Ω @ VGS= -10V P-CH -60V 5.1nC 0.60Ω @ VGS= -4.5V -1.2A 1.5A -1.4A ID TA= 25°C 1.8A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D Applications DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC6A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 6A07 Issue 1.0 - March 2009 © Diodes Incorporated 1 www.diodes.com www.DataSheet4U.com ZXMHC6A07N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25°C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nchannel 60 ±20 1.80 1.40 1.39 1.42 Pchannel -60 ±20 -1.42 -1.28 -1.28 -1.33 -6.03 -1.00 -6.03 Unit V V A IDM IS ISM PD PD PD Tj, Tstg 7.10 1.00 7.10 0.87 6.94 1.36 10.9 0.90 7.19 A A A W mW/°C W mW/°C W mW/°C °C Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating...