ZXMC10A816N8

www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary Device V(BR)DSS (V) QG (nC) RDS(on) (Ω) 0.230 @ VGS= 10V Q1 100 9.2 0.300 @ VGS= 4.5V 0.235 @ VGS= -10V Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 1.9 -2.2 ID (A) TA= 25°C 2.1 Description This new generation complementary dual MOSFET features low on-resistance achievable with low gate drive. D1 D2 Features 100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.5 V) gate drive G1 S1 Q1 N-Channel G2 S2 Q2 P-Channel Applications DC motor control Backlighting Class D Audio Output Stages (<100W) G1 D1 D2 D2 Top view S2 S1 D1 Ordering information Device ZXMC10A816N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 G2 Device marking ZXMC 10A816 Issue 1.3 - March 2009 © Diodes Incorporated 2009 1 www.diodes.com www.DataSheet4U.com ZXMC10A816N8 Absolute maximum ratings Parameter Symbol Nchannel Q1 100 Pchannel Q2 -100 Unit Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25°C (c)(d) (b)(d) (b)(d) (b)(d) (a)(d) (a)(e) (f)(d) VDSS VGS ID V V A ±20 2.1 1.7 1.7 2.0 2.3 ±20 -2.2 -1.8 -1.7 -2.0 -2.4 -10.5 -3.1 -10.5 1.3 10.0 1.8 14.2 2.1 16.7 IDM IS ISM PD PD PD PD Tj, Tstg 9.4 3.0 9.4 A A A W mW/°C W mW/°C W mW/°C C...