N-channel Enhancement mode field-effect power Transistor
Description
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BUK9006-55A
TrenchMOS™ logic level FET
Rev. 01 — 1 August 2003 Preliminary data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. Product availability: BUK9006-55A distributed as individual die on reel.
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