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2STF1525
Low voltage high performance NPN power transistor
Preliminary data
Features
■ ■ ■
Very l...
www.DataSheet4U.com
2STF1525
Low voltage high performance
NPN power
transistor
Preliminary data
Features
■ ■ ■
Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed
4 3 2 1
Applications
■ ■ ■ ■ ■ ■
Emergency lighting LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1.
SOT-89
Internal schematic diagram
Description
The device is a
NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting
transistor shows exceptional high gain performances coupled with very low saturation voltage.
Table 1.
Device summary
Marking 1525 Package SOT-89 Packaging Tape and reel
Order codes 2STF1525
June 2009
Doc ID 15794 Rev 1
1/7
www.st.com 7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
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2STF1525
1
Electrical ratings
Table 2.
Symbol VCEX VCEO VEBO IC ICM IB PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (VBE = -1.5 V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Value 95 25 5 5 10 1 1.4 -65 to 150 150 Unit V V V A A A W °C °C
Table 3.
Symbol RthJA(1)
Thermal data
Parameter Thermal resistance junction-ambient ...