PMEG2005CT

PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ Average forward current: IF(AV) ≤ 0.5 A „ Reverse voltage: VR ≤ 20 V „ Low forward voltage „ AEC-Q101 qualified „ Small SMD plastic package 1.3 Applications „ Low voltage rectification „ High efficiency DC-to-DC conversion „ Switch Mode Power Supply (SMPS) „ Reverse polarity protection „ High-speed switching „ Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Per diode IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz VR reverse voltage VF forward voltage IR reverse current Tamb ≤ 100 °C Tsp ≤ 130 °C IF = 0.5 A VR = 20 V [1] - - 0.5 - 0.5 - 20 360 390 30 200 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Unit A A V mV μA NXP Semiconductors PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin 1 2 3 Pinning Description anode (diode 1) anode (diode 2) common cathode Simplified outline Graphic symbol 33 12 12 006aaa...