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SSM3J305T
Field-Effect Transistor Silicon P-Channel MOS Type
Description
SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect
Transistor
Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain p...
Toshiba Semiconductor
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