SSM3J16FU

SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDS −20 V VGSS ±10 V ID −100 mA IDP −200 PD(Note1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.6 mm2 × 3) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 6.0 mg (typ.) Marking 0.6 mm 1.0 mm Equivalent Circuit (top view) 3 3 DT 1 2 1 2 Handling Precaution When handling individual ...