SSM3J15F

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications SSM3J15F Small package Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Unit: mm +0.5 2.5-0.3 +0.25 1.5-0.15 +0.1 0.4-0.05 0.3 +0.1 0.16-0.06 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 2.9±0.2 1.9 0.95 0.95 1 2 3 Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg −30 V ±20 V −100 mA −200 200 mW 150 °C −55 to 150 °C +0.2 1.1-0.1 S-MINI 1.Gate 2.Source 3.Drain 0~0.1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC TO-236MOD temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA SC-59 operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3F1F absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.012g(typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 Equivalent Circuit (top view) 3 DQ 1 2 1 2 Handling Precaution When handling i...