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SSM3J109TU

Toshiba Semiconductor
Part Number SSM3J109TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 7, 2009
Detailed Description SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU ○ Power Management Switch Application...
Datasheet PDF File SSM3J109TU PDF File

SSM3J109TU
SSM3J109TU

Overview
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.
8 V drive • Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.
8 V) Ron = 172 mΩ (max) (@VGS = -2.
5 V) Ron = 130 mΩ (max) (@VGS = -4.
0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2 A -4 Drain power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of hi...


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