SI1419DH

P-Channel 200 V (D-S) MOSFET Si1419DH Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 200 5.0 at VGS = - 10 V 5.1 at VGS = - 6 V ID (A) - 0.38 - 0.37 Qg (Typ.) 4.1 SOT-363 SC-70 (6-LEADS) D1 D2 G3 6D 5D 4S Marking Code YY BH XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1419DH-T1-E3 (Lead (Pb)-free) Si1419DH-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETS Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Circuits in dc-to-dc Power Supplies S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C L = 0.1 mH TA = 25 °C TA = 85 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg - 200 ± 20 - 0.38 - 0.3 - 0.27 - 0.22 - 0.5 - 1.3 - 0.83 - 1.9 0.18 1.56 1.0 0.81 0.52 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA Rt...