SI1402DH

Si1402DH www.DataSheet4U.com New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.4 2.5 rDS(on) (W) 0.077 @ VGS = 4.5 V 0.120 @ VGS = 2.5 V D TrenchFETr Power MOSFET: 2.5-V Rated APPLICATIONS D Load Switch for Portable Applications Product Is Completely Pb-free SOT-363 SC-70 (6-LEADS) D 1 6 5 D Marking Code YY Lot Traceability and Date Code Part # Code AE D XX D 2 G 3 4 S Top View Ordering Information: Si1402DH-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 30 "12 3.4 2.7 8 1.2 1.45 0.94 Steady State Unit V 2.7 2.2 A 0.8 0.95 0.6 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73328 S-50527—Rev. A, 28-Mar-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 65 87 40 Maximum 85 130 50 Unit _C/W 1 Si1402DH www.DataSheet4U.com Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ...