STD13NM60N

STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Features TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram 'RU7$% * 6 Applications Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6& Order code STB13NM60N STD13NM60N Table 1. Device summary Marking Packages 13NM60N D²PAK DPAK Packaging Tape and reel June 2015 This is information on a pr...