Power MOSFET
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PD - 96139
IRFH7923PbF
Applications
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HEXFET® Power MOSFET
l
High Frequency Point-of-Load Synch...
Description
www.DataSheet4U.com
PD - 96139
IRFH7923PbF
Applications
l
HEXFET® Power MOSFET
l
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications
VDSS 30V
RDS(on) max Qg 8.7m @VGS = 10V 8.7nC
:
Benefits
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Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering
D D D D
S S S G
PQFN
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 15 12 33 120 3.0
Units
V
g Power Dissipation g
Power Dissipation
c
A W W/°C °C
Linear Derating Factor Operating Junction and
g
1.9 0.02 -55 to + 150
Storage Temperature Range
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case
f
Typ.
––– –––
Max.
8.3 42
Units
°C/W
Junction-to-Ambient
g
Notes through
are on page 9
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3/3/08
1
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IRFH7923PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Sou...
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