KI4532DY

www.DataSheet4U.com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532DY Transistors IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID N-Channel 30 20 3.9 3.1 20 1.7 2 1.3 -55 to 150 62.5 /W P-Channel -30 20 3.5 2.8 20 -1.7 2 1.3 Unit V V A A A A W W www.kexin.com.cn 1 www.DataSheet4U.com SMD Type KI4532DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 30V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 VDS = -30V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -10 V, ID = -2.5A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 10V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg ...