KI4505DY

www.DataSheet4U.com SMD Type N- and P-Channel MOSFET KI4505DY Transistors IC Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec. TJ, Tstg IDM IS PD 1.8 2 1.3 Symbol VDS VGS ID 7.8 6 30 1 1.2 0.75 -1.8 2 1.3 -55 to 150 N-Channel 10 sec Steady State 30 20 6 5.2 -5 -3.6 -30 1 1.2 0.75 P-Channel 10 sec Steady State -8 8 -3.8 -3 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 50 85 30 Max 62.5 105 40 P-Channel Typ 50 85 30 Max 62.5 105 40 /W Unit Steady State Steady State www.kexin.com.cn 1 www.DataSheet4U.com SMD Type KI4505DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 8 V VDS = 24V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -6.4V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 VDS = -6.4V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 10 V VDS =-5 V, VGS = -4.5 V VGS = 10 V, ID = 7.8A Drain Source On State Resistance* rDS(on) VGS = -4.5...