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F25L016A

Elite Semiconductor

16Mbit (2Mx8) 3V Only Serial Flash Memory

www.DataSheet4U.com ESMT F25L016A 16Mbit (2Mx8) 3V Only Serial Flash Memory „ FEATURES Single supply voltage 2.7~3.6...


Elite Semiconductor

F25L016A

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Description
www.DataSheet4U.com ESMT F25L016A 16Mbit (2Mx8) 3V Only Serial Flash Memory „ FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz;100MHz Low power consumption - typical active current - 15 μ A typical standby current Reliability - 100,000 typical program/erase cycles - 20 years Data Retention Program - Byte program time 7 μ s(typical) Erase - Chip erase time 10s(typical) - Sector erase time 60ms(typical) y block erase time 1sec (typical) Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over Word-Program operations SPI Serial Interface - SPI Compatible : Mode 0 and Mode3 End of program or erase detection Write Protect ( WP ) Hold Pin ( HOLD ) Package available - 8-pin SOIC 200-mil y y y y y y y y y y y ORDERING INFORMATION Part No. F25L016A –50PAG Speed 50MHz Package 8 lead SOIC 8 lead SOIC 200mil 200mil COMMENTS Pb-free Pb-free F25L016A –100PAG 100MHz GENERAL DESCRIPTION The F25L016A is a 16Megablt, 3V only CMOS Serial Flash memory device organized as 2M bytes of 8 bits. This device is packaged in 8-lead SOIC 200mil. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles. The F25L016A features a sector erase architecture. The device memory array is divided into 512 uniform sectors with 4K byte each ; 32 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. Blocks can be erase...




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