Power MOSFET
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
C...
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation gMaximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
VDSS
30V
PD - 96123
IRLR8743PbF
IRLU8743PbF
HEXFET® Power MOSFET
RDS(on) max Qg
3.1m:
39nC
D
S G
S D G
D-Pak
I-Pak
IRLR8743PbF IRLU8743PbF
G Gate
D Drain
S Source
Max. 30 ± 20
f160 f113
640 135 68
0.90 -55 to + 175
Units V
A
W
W/°C °C
300 (1.6mm from case)
Typ. ––– ––– –––
Max. 1.11 50 110
Units °C/W
Notes through
are on page 11 www.irf.com
1
08/15/07
IRLR/U8743PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage ...
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