2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST2121
■ Typical ft = 25 MHz
t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a NPNtransistor manufactured o using new BiT-LA (Bipolar transistor for linear s ampli...
