KDV303N

SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) ● RDS(ON) ＜ 600mΩ (VGS = 2.7V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.10.38 -0.1 GS ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ESD ID IDM PD RthJA TJ Tstg Rating 25 ±8 6 0.68 2 350 357 150 -55 to 150 Unit V KV A mW ℃/W ℃ www.kexin.com.cn 1 SMD Type MOSFET N-Channel MOSFET FDV303N (KDV303N) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance (Note.1) On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) ID(ON) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS VSD Test Conditions ID=250μA...