N-Channel MOSFET
SMD Type
N-Channel MOSFET FDV303N (KDV303N)
MOSFET
■ Features
● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) < 450mΩ (VGS = ...
Description
SMD Type
N-Channel MOSFET FDV303N (KDV303N)
MOSFET
■ Features
● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) < 450mΩ (VGS = 4.5V) ● RDS(ON) < 600mΩ (VGS = 2.7V)
D
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.10.38
-0.1
GS
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)
Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range
Symbol VDS VGS
ESD
ID IDM PD RthJA TJ Tstg
Rating 25 ±8
6
0.68 2
350 357 150 -55 to 150
Unit V
KV
A mW ℃/W ℃
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SMD Type
MOSFET
N-Channel MOSFET FDV303N (KDV303N)
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance (Note.1)
On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Maximum Body-Diode Continuous Current Diode Forward Voltage
Symbol VDSS
IDSS
IGSS VGS(th)
RDS(On)
ID(ON) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off)
tf IS VSD
Test Conditions ID=250μA...
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