AP4955M

www.DataSheet4U.com AP4955M Advanced Power Electronics Corp. ▼ Simple Drive Requirement D2 D2 D1 D1 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 S1 G1 -20V 45mΩ -5.6A ▼ Low Gate Charge ▼ Fast Switching Characteristic ID Description TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±20 -5.6 -4.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200303041 www.DataSheet4U.com AP4955M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 Typ. -0.01 Max. Units 45 65 -1.2 -1 -25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-4A 9 19 3 6 ...