BTB1424L3

www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817L3 Issued Date : 2003.07.31 Revised Date :2004.12.15 Page No. : 1/3 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424L3 Features Excellent DC current gain characteristics Low Saturation Voltage VCE(sat)=-0.4V(typ) (IC=-2A, IB=-100mA). Complementary to BTD2150L3 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Note : Single pulse, Pw≤10ms, Duty Cycle≤30%. Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -50 -50 -6 -3 -5 (Note) 5 150 -55~+150 Unit V V V A W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -50 -50 -6 82 Typ. 240 35 Max. -0.1 -0.1 -0.5 560 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-40V VEB=-5V IC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank HFE range P 82~180 Q 120~270 R 180~390 S 270~560 BTB1424L3 CYStek Product Specification www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817L3 Issued Date : 2003.07.31 Revised Date :2004.12.15 Page No. : 2/3 Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VCE=5V Current Gai...