M8JZ47

SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A www.DataSheet4U.com TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage l R.M.S ON−State Current l High Commutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC : VDRM = 400, 600V : IT (RMS) = 8A Unit: mm MAXIMUM RATINGS CHARACTERISTIC SM8GZ47 SM8GZ47A SM8JZ47 SM8JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL 2 UNIT Repetitive Peak Off−State Voltage V R.M.S On−State Current (Full Sine Waveform Tc = 83°C) Peak One Cycle Surge On-State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 2 8 80 (50Hz) 88 (60Hz) 32 50 5 0.5 10 2 −40~125 −40~125 1500 A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test Condition VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT×2.0 1 2001-07-13 SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I SM8GZ47 SM8JZ47 Gate Trigger Current SM8GZ47A SM8JZ47A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance C...