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STAP57060

ST Microelectronics
Part Number STAP57060
Manufacturer ST Microelectronics
Description RF power transistor
Published Jun 10, 2009
Detailed Description STAP57060 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Fe...
Datasheet PDF File STAP57060 PDF File

STAP57060
STAP57060

Overview
STAP57060 www.
datasheet4u.
com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 60 W with 14.
3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package Description The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies of up to 1 GHz.
STAP57060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package.
STAP package has b...


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