STAP57100

STAP57100 www.datasheet4u.com RF power transistor the LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration push-pull POUT = 100 W with 14 dB gain @ 860 MHz ST advanced PowerSO-10RF - STAP package Load mismatch 10:1 all phases In compliance with the 2002/95/EC european directive Description The STAP57100 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The STAP57100 is designed for high gain and broadband performance operating in common source mode at 28 V. Figure 1. Pin connection 1 4 5 3 2 1, 2 Drain 3 Source 4, 5 Gate Table 1. Device summary Order code STAP57100 Package STAP2 Branding STAP57100 April 2009 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical data STAP57100 1 www.datasheet4u.com Electrical data Maximum ratings TCASE = 25 °C Table 2. Symbol V(BR)DSS VGS ID PDISS TJ TSTG 1.1 Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ Tc = 70 °C) Max. operating junction temperature Storage temperature Value 65 ± 20 14 190 165 -65 to + 150 Unit V V A W °C °C 1.2 Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Value 0.50 Unit °C/W 2/8 STAP57100 El...